impurity distribution
英 [ɪmˈpjʊərəti ˌdɪstrɪˈbjuːʃn]
美 [ɪmˈpjʊrəti ˌdɪstrɪˈbjuːʃn]
网络 杂质分布
双语例句
- In this study, through the impurity distribution, organization and resistivity analysis, it evaluates the directional solidification purification effect on the polysilicon in the round.
本实验通过对提纯后硅铸锭的杂质分布、组织及电阻率分析，系统评价了定向凝固方法对多晶硅提纯效果。 - The paper dissertated the impurity distribution of titanium sponge and its affect on product quality.
本文论述了海绵钛产品的杂质分布及对产品质量的影响。 - And the grade of impurity concentration distribution was known from1C3-V curve.
由1C3-V曲线斜率可知杂质浓度分布梯度。 - Impurity distribution and crucible contamination of pulled crystals of silicon
硅单晶的杂质分布和坩埚沾污率 - And the lattice strain distribution were compared with the impurity density distribution, the result indicates that the lattice strain distribution curve of N2+/ As+ compound ion implanted Si has a peak between two peaks of the impurity density distribution curve near the left peak.
结果表明N2~+/As~+组合离子注入单晶Si的应变分布曲线为单峰，位于杂质浓度分布曲线的双峰之间，靠近重离子峰。 - Investigation on impurity distribution in cathode copper of Jinlong Company
金隆铜业公司阴极铜杂质分布的调查 - Measurement results of impurity concentration show that implanted P element distributes mainly in collector region and has no obvious influence to the impurity distribution in emitter and base.
扩展电阻的测试结果显示出注入的P离子基本上集中在集电区的位置，对发射区和基区未造成显著影响。 - Semiconductor material is removed layer by layer with anode oxidation method. Resistivity and relevant impurity concentration in every layer is measured with four point probe method. The impurity distribution of semiconductor material N ( x) is obtained.
利用阳极氧化法对半导体材料逐次去层，采用四探针法测量其每层的电阻率及相应杂质浓度，可得出半导体材料的杂质分布N（x）。 - The measurement of impurity distribution in semicoductor material with four point probe method
四探针测半导体材料杂质分布 - Experimental results show that p-type silicon crystals with phosphorus impurity compensation higher than 7% are susceptible to inversion by pulsed laser irradiation when the amount of impurity compensation increases and the distribution of impurity compensation changes.
实验结果表明：脉冲激光辐照之后补偿杂质浓度增加，补偿杂质磷分布发生变化，杂质补偿度大于7%的样品在被激光辐照的区域较容易转变为n型导电。 - Influence of Impurity Distribution on the Electrical Properties of the Polycrystalline Silicon Films
杂质分布对多晶硅薄膜电性能的影响 - The influence of impurity distribution to the corrosion rate of gadolinium in water
杂质分布对稀土金属钆水中腐蚀性能的影响 - Increasing the boundary density can reduce the segregation of impurity atoms and the distribution inhomogeneity of current density. Therefore, it is possible to increase the specific capacity by means of reducing the grain size under some electrochemistry corrosion conditions.
增加晶界密度可以降低杂质原子偏聚程度和电流密度分布的不均匀性，因此在一些特定的电化学腐蚀条件下可以借助减小晶粒尺寸的方式提高比电容。 - The impurity distribution, doping activation mechanism, and interaction between Fe atoms and point defects in Fe-doped and annealed undoped semi-insulating ( SI) InP materials are compared.
比较了掺Fe和非掺退火半绝缘（SI）InP材料中Fe杂质的分布，掺杂激活机理以及Fe原子与点缺陷的相互作用。 - The solar energy polycrystalline silicon material in which impurity concentration is low and the distribution of column crystalline is uniform was obtained in experiment.
在实验中获得了杂质浓度低且呈较整齐分布的技状晶太阳能多晶硅材料。 - It is also shown that to measure impurity concentration and/ or the distribution of impurity concentration is a better way for checking the diffused layer quality.
而测量杂质浓度或杂质浓度分布，将是检查扩散层质量的较好方法。 - Damage Annealing and Impurity Density Distribution of As~+/ N_2~+ Co-Implantation Si
As~+/N2~+组合离子注入Si的损伤退火及杂质浓度分布 - The junction depth of impurity distribution after annealing is measured as well as the impurity activation rate, and compared with the theoretical results.
测定了退火后杂质分布结深和杂质激活率，并与理论结果进行了比较。 - The general relationship between average mobility of carries and average conductivity in a doped layer with an arbitrary impurity distribution has been established.
本文建立了非均匀次掺杂层载流子平均迁移率与平均电导的普遍关系。 - Using a Pair of Mecury Probes C-V Method to Test for Impurity Concentration Distribution
双汞探针C-V法测试硅材料杂质浓度分布 - Determination of Impurity Distribution in Silicon Epitaxial Layers by Schottky Junction Capacitance Measurements
采用肖特基二极管测量外延层杂质分布 - Impurity Distribution of Silicon Direct Bonding
Si-Si直接键合的杂质分布 - The strength and fragmenting property of the synthetic diamond abrasive grain hinge on its crystal shape and regularity and completeness, internal vice, impurity content and impurity distribution pattern.
金刚石磨粒的强度和破碎性能主要取决于其晶形及其规则程度和完整性、内部缺陷及杂质含量和分布形式等。 - In this study, based on the ionic distribution, osmosis and impurity elements distribution, the Ti bone integration mechamism was discussed at molecular and atomic level.
研究根据纯钛种植体与骨组织间的离子分布、渗透等情况，从分子、原子水平进一步对钛与骨组织的相互作用及结合机理进行了探讨。 - A series of general formulae of impurity concentration distribution along the ingot after point-doping zone melting has been derived.
得到了点掺杂区熔后杂质沿锭长分布的一系列普遍公式。 - Thus the distribution of sheet resistance for whole wafer is got by automatic testing and it offers information for detecting the impurity distribution and the diffusion uniformity.
这样测试系统可以自动获得全片的薄层电阻分布，为超大规模集成电路检测杂质分布和扩散的均匀性提供信息。 - ESR study of trace-impurity distribution in minerals
利用电子顺磁共振研究矿物中微量杂质分布状态的问题 - The relationship between impurity distribution and the electrical property in the diffused layer is also discussed from the point of view of stoichiometry balance in the material. It is concluded that the diffusion of St in GaAs is dominated by the concentration of As vacancy.
共Al扩散时，Si杂质内扩散很深.用GaAs中化学配比平衡观点讨论了扩散层中杂质分布与电学性能关系，认为Si杂质在GaAs中的热扩散主要由As空位浓度决定。 - The quantitative solution of the final longitudinal direction impurity distribution using the mathematical physics model of impurity carrier-gas transport drift and rediffusion in growth process was carried out.
采用了掺入杂质分子经载体气体漂移扩散输运和生长过程中再扩散的数学物理理论，导出了掺杂杂质最终纵向浓度分布的数学定量解析式。 - Model and Simulation of Impurity Distribution for Silicon Direct Bonding
硅片直接键合杂质分布的模型与模拟